2SD1409A Datasheet - Toshiba Semiconductor

2SD1409A NPN Transistor

2SD1409A TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington) 2SD1409A High Voltage Switching Applications Industrial Applications Unit: mm High DC current gain: hFE = 600 (min.) (VCE = 2 V, IC = 2 A) Monolithic construction with built-in base-emitter shunt resistor Absolute Maximum Ratings (Ta = 25°C) Characteristics S Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction tempe.

2SD1409A Features

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2SD1409A_ToshibaSemiconductor.pdf