2SD1412 Silicon NPN Power Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor 2SD1412 .
Low Collector Saturation Voltage : VCE(sat)= 0. Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V (Min). Complement to.

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Datasheet Specifications

Part number: 2SD1412
Manufacturer: INCHANGE
File Size: 215.44 KB
Datasheet: 2SD1412-INCHANGE.pdf
Description: Silicon NPN Power Transistor

Applications

* High current switching applications.
* Power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 70 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 7 A IB B

2SD1412 Distributors

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2SD1412 Silicon NPN Power Transistor INCHANGE

INCHANGE 2SD1412-like datasheet