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2SD1412 Silicon NPN Power Transistor

2SD1412 Description

isc Silicon NPN Power Transistor 2SD1412 .
Low Collector Saturation Voltage : VCE(sat)= 0. Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V (Min). Complement to.

2SD1412 Applications

* High current switching applications.
* Power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 70 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 7 A IB B

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Datasheet Details

Part number
2SD1412
Manufacturer
INCHANGE
File Size
215.44 KB
Datasheet
2SD1412-INCHANGE.pdf
Description
Silicon NPN Power Transistor

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Silicon NPN Power Transistor INCHANGE
INCHANGE 2SD1412-like datasheet