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2SD1413 - NPN Transistor

2SD1413 Description

isc Silicon NPN Darlington Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 40V(Min). Collector-Emitter Saturation Voltage- : VCE(sat)= 1. High DC C.

2SD1413 Applications

* Switching applications
* Hammer driver,pulse motor driver applications
* Power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 5 V IC Coll

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Datasheet Details

Part number
2SD1413
Manufacturer
INCHANGE
File Size
208.49 KB
Datasheet
2SD1413-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE 2SD1413-like datasheet