2SD1413 Datasheet - INCHANGE

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2SD1413 NPN Transistor

isc Silicon NPN Darlington Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 40V(Min). Collector-Emitter Saturation Voltage- : VCE(sat)= 1. High DC C.

2SD1413-INCHANGE.pdf

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Datasheet Details

Part number:

2SD1413

Manufacturer:

INCHANGE

File Size:

208.49 KB

Description:

NPN Transistor

Applications

* Switching applications
* Hammer driver,pulse motor driver applications
* Power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 5 V IC Coll

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2SD1413 NPN Transistor INCHANGE

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