Darlington 2SD1769 sElectrical Characteristics Sy.
2SD1769 - Silicon NPN Transistor
Darlington 2SD1769 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=120V VEB=6V IC=10mA VCE=2V, IC=3.D1769 - 2SD1769
Darlington 2SD1769 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=120V VEB=6V IC=10mA VCE=2V, IC=3.2SD1769 - NPN Transistor
isc Silicon NPN Darlington Power Transistor 2SD1769 DESCRIPTION ·High DC Current Gain- : hFE = 2000(Min)@ IC= 3A ·Collector-Emitter Sustaining Volta.