D1857 Datasheet | Specifications & PDF Download

UNISONIC TECHNOLOGIES CO., LTD 2SD1857 POWER TRANSISTOR FEATURES * High breakdown voltage.(BVCEO=120V) * Low collector output capacitance.(Typ.20pF at

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CYStech Electronics Corp. Silicon NPN Epitaxial Planar Transistor BTD1857AM3 BVCEO IC RCESAT(MAX) Spec. No. : C855M3-R Issued Date : 2004.08.06 Rev

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a Stereo, Single Supply 16-, 18- and 20-Bit Sigma-Delta DACs AD1857/AD1858 PRODUCT OVERVIEW FEATURES Low Cost, High Performance Stereo DACs 128 Time

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Power Transistor (120V, 2A) 2SD1857 Features 1) High breakdown voltage. (BVCEO = 120V) 2) Low collector output capacitance. (Typ. 20pF at VCB = 10V)

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CYStech Electronics Corp. Silicon NPN Epitaxial Planar Transistor BTD1857AJ3G BVCEO IC RCESAT Spec. No. : C855J3G Issued Date : 2004.10.04 Revised

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CYStech Electronics Corp. Silicon NPN Epitaxial Planar Transistor BTD1857A3 Spec. No. : C855A3 Issued Date : 2004.12.23 Revised Date : 2016.03.28 Pag

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www.DataSheet4U.com ISSUED DATE :2003/10/22 REVISED DATE :2004/11/29B GSD1857 POWER TRANSISTOR N P N E P I TA X I A L P L A N A R T R A N S I S T O

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CYStech Electronics Corp. Silicon NPN Epitaxial Planar Transistor BTD1857AFP Spec. No. : C855FP Issued Date : 2004.08.15 Revised Date :2015.10.21 Pag

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2SD2211 / 2SD1918 / 2SD1857A Transistors Power Transistor (160V , 1.5A) 2SD2211 / 2SD1918 / 2SD1857A Features 1) High breakdown voltage.(BVCEO = 160

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2SD1857 Rev.E Mar.-2016 DATA SHEET / Descriptions TO-92LM NPN 。Silicon NPN transistor in a TO-92LM Plastic Package. / Features ，，。 High breakd

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UNISONIC TECHNOLOGIES CO., LTD 2SD1857 NPN EPITAXIAL SILICON TRANSISTOR POWER TRANSISTOR  FEATURES * High breakdown voltage.(BVCEO=120V) * Low co

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CYStech Electronics Corp. Silicon NPN Epitaxial Planar Transistor Spec. No. : C855D3 Issued Date : 2004.09.21 Revised Date :2005.04.20 Page No. : 1/4

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CYStech Electronics Corp. Silicon NPN Epitaxial Planar Transistor BTD1857AE3 Spec. No. : C855E3 Issued Date : 2004.08.06 Revised Date :2013.11.13 Pag

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CYStech Electronics Corp. Silicon NPN Epitaxial Planar Transistor BTD1857AL3 Spec. No. : C855L3 Issued Date : 2005.06.17 Revised Date : 2010.12.31 Pa

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isc Silicon NPN Power Transistor DESCRIPTION ·High breakdown voltage. (BVCEO = 120V) ·Low collector output capacitance. ·High transition frequency. (

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CYStech Electronics Corp. Silicon NPN Epitaxial Planar Transistor BTD1857AI3 Spec. No. : C855I3 Issued Date : 2004.09.16 Revised Date :2017.12.08 Pag

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CYStech Electronics Corp. Silicon NPN Epitaxial Planar Transistor BTD1857AJ3 BVCEO IC Spec. No. : C855J3 Issued Date : 2004.10.04 Revised Date :201

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2SD1857D Rev.E May.-2016 DATA SHEET / Descriptions TO-252 NPN 。Silicon NPN transistor in a TO-252 Plastic Package.  / Features ，，。 High break

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CYStech Electronics Corp. Silicon NPN Epitaxial Planar Transistor BTD1857AT3 Spec. No. : C855T3 Issued Date : 2004.12.15 Revised Date :2018.07.02 Pag

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