2SD1911 GENERAL DESCRIPTION Silicon Diffused Powe.
2SD1911 - NPN Transistor
isc Silicon NPN Power Transistor DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·High Reliability ·Built-in Damper Di.D1911 - 2SD1911
2SD1911 GENERAL DESCRIPTION Silicon Diffused Power Transistor Highvoltage,high-speed switching npn transistors in a plastic envelope with integrated.2SD1911 - SILICON POWER TRANSISTOR
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1911 www.datasheet4u.com DESCRIPTION ·With TO-3PFM package ·High br.