www.DataSheet4U.com D200 Series Single & Dual Out.
China Hua Jing Electronics
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CD2003GP - FM/AM RADIO-IC
CD2003GP/GB FM/AM RADIO IC 1、 Overvie w The CD2003GP/GB is a monolithic IC designed for use as a FM/AM radio system. Combined with audio power amplifi.
Inchange
111
3DD200 - Silicon Power Transistor
isc Silicon NPN Power Transistor INCHANGE Semiconductor 3DD200 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min.) ·DC Current .
ELECHOUSE
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LCD2004 - LCD Module
LCD2004 Module User Guid www.elechouse.com LCD2004 Module User Guid LCD2004 Module User Guid www.elechouse.com Chapter 1. 2004 LCD Module Blue Ch.
China Hua Jing Electronics
44
CD2003GB - FM/AM RADIO-IC
CD2003GP/GB FM/AM RADIO IC 1、 Overvie w The CD2003GP/GB is a monolithic IC designed for use as a FM/AM radio system. Combined with audio power amplifi.
Chipown
37
ID2006 - High-Side & Low-Side Gate Driver
ID2006 Chipown High-Side & Low-Side Gate Drive IC General description The ID2006 is a high voltage, high speed power MOSFET driver with independent.
Tyco
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SMD200F-2018 - SMD Series PolySwitch
PolySwitch ，PolySwitch SMD 、、、 。 1995，miniSMD 。microSMD、nanoSMDpicoSMD ， picoSMD2012mm (0805mils)，miniSMD。 24V miniSMD4532mm (1812mils) ， 60V dec.
Shinano Kenshi
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STA-42D2004 - 2 Phase Hybrid Stepping Motor
2 Phase Hybrid Stepping Motor 42D SERIES (For large quantity orders) □42mm 1.8° Bipolar STA-42D series can achieve larger torque than existing motor.
LINEAR SYSTEMS
28
PAD200 - PICO AMPERE DIODES
PAD SERIES PICO AMPERE DIODES FEATURES DIRECT REPLACEMENT FOR SILICONIX PAD SERIES REVERSE BREAKDOWN VOLTAGE REVERSE CAPACITANCE ABSOLUTE MAXIMUM R.
ST Microelectronics
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2001FX - MD2001FX
www.DataSheet4U.com MD2001FX High voltage NPN power transistor for standard definition CRT display Features ■ ■ ■ ■ ■ State-of-the-art technology: –.
ST Microelectronics
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MD2009DFX - High voltage NPN Power transistor
www.DataSheet4U.com MD2009DFX High voltage NPN Power transistor for standard definition CRT display General features ■ ■ ■ ■ ■ ■ ■ State-of-the-art.
Sanyo
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RD2003JN - High-Speed Switching Diode
Ordering number : ENA1593 RD2003JN SANYO Semiconductors DATA SHEET RD2003JN Features • • • • • Diffused Junction Silicon Diode Low VF • High-Spe.
CR Micro
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CRTD200N06L2-G - Trench N-MOSFET
Features • Uses CRM advanced Trench technology • Extremely low on-resistance RDS(on) • Excellent QgxRDS(on) product(FOM) • Qualified according to JEDE.
Gwok
18
GC3D20065A - Silicon Carbide Schottky Diode
GC3D20065A Silicon Carbide Schottky Diode Features VRRM = 650 V • 650-Volt Schottky Rectifier IF (TC=135˚C) = 26 A** • Zero Reverse Recovery C.
Wolfspeed
18
C3D20065D - 20A Silicon Carbide Schottky Diode
C3D20065D 3rd Generation 650 V, 20 A Silicon Carbide Schottky Diode Description With the performance advantages of a Silicon Carbide (SiC) Schottky B.
Wolfspeed
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C6D20065A - 20A Silicon Carbide Schottky Diode
C6D20065A 6th Generation 650 V, 20 A Silicon Carbide Schottky Diode Description With the performance advantages of a Silicon Carbide (SiC) Schottky.
ST Microelectronics
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MD2001FX - High voltage NPN Power transistor
MD2001FX High voltage NPN Power transistor for standard Definition CRT display Preliminary Data Features ■ ■ ■ ■ ■ State-of-the-art technology: – Di.
