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RD2006FR - Ultrahigh-Speed Switching Diode

Key Features

  • Diffused Junction Silicon Diode Ultrahigh-Speed Switching Diode VF=1.75V max (IF=20A) VRRM=600V trr=21ns (typ. ) Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Repetitive Peak Reverse Voltage Average Output Current Surge Forward Current Junction Temperature Storage Temperature Symbol VRRM DC bias Sine wave, 10ms single pulse Conditions Ratings 600 20 220 150 --55 to +150 Unit V A A °C °C IO IFSM Tj Tstg Package Dim.

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Other Datasheets by SANYO (now Panasonic)

Part Number Description
RD2006LS-SB Ultrahigh-Speed Switching Diode
RD2006LS-SB5 Ultrahigh-Speed Switching Diode
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : ENA1832 RD2006FR SANYO Semiconductors DATA SHEET RD2006FR Features • • • • Diffused Junction Silicon Diode Ultrahigh-Speed Switching Diode VF=1.75V max (IF=20A) VRRM=600V trr=21ns (typ.) Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Repetitive Peak Reverse Voltage Average Output Current Surge Forward Current Junction Temperature Storage Temperature Symbol VRRM DC bias Sine wave, 10ms single pulse Conditions Ratings 600 20 220 150 --55 to +150 Unit V A A °C °C IO IFSM Tj Tstg Package Dimensions unit : mm (typ) 7532-001 10.16 3.18 3.3 4.7 2.54 Product & Package Information • Package : TO-220F-2FS • JEITA, JEDEC : SC-67 • Minimum Packing Quantity : 50 pcs./magazine Marking Electrical Connection 2 15.8 15.87 6.68 3.23 1.