Diffused Junction Silicon Diode
Ultrahigh-Speed Switching Diode
High breakdown voltage (VRRM=400V). High reliability. One-point fixing type plastic molded package facilitating easy mounting and heat dissipation. Fast forward / reverse recovery time. Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage Average Output Current Peak Output Current Surge Forward Current Junctio.
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Ordering number : ENA0968
RD2004LS
SANYO Semiconductors
DATA SHEET
RD2004LS
Features
• • • •
Diffused Junction Silicon Diode
Ultrahigh-Speed Switching Diode
High breakdown voltage (VRRM=400V). High reliability. One-point fixing type plastic molded package facilitating easy mounting and heat dissipation. Fast forward / reverse recovery time.