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RD2004LN - Ultrahigh-Speed Switching Diode

Key Features

  • Diffused Junction Silicon Diode Ultrahigh-Speed Switching Diode High breakdown voltage (VRRM=400V). High reliability. One-point fixing type plastic molded package facilitating easy mounting and heat dissipation. Fast reverse recovery time. Low noise at the time of reverse recovery. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage Average Output Current Surge.

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Ordering number : ENA1270A RD2004LN SANYO Semiconductors DATA SHEET RD2004LN Features • • • • • Diffused Junction Silicon Diode Ultrahigh-Speed Switching Diode High breakdown voltage (VRRM=400V). High reliability. One-point fixing type plastic molded package facilitating easy mounting and heat dissipation. Fast reverse recovery time. Low noise at the time of reverse recovery.