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RD2004JS-SB - Ultrahigh-Speed Switching Diode

Key Features

  • Diffused Junction Silicon Diode Ultrahigh-Speed Switching Diode VF=1.5V max. (IF=20A) VRRM=400V trr=20ns (typ. ) Specifications Absolute Maximum Ratings at Ta=25°C Parameter Repetitive Peak Reverse Voltage Non-repeated Peak Reverse Surge Voltage Average Output Current R. M. S Forward Current Surge Forward Current Junction Temperature Storage Temperature Symbol VRRM VRSM DC bias PW≤100μs, duty ≤ 0.1 50Hz resistive load, Sine wave Tc=41°C Tc=25°C (SANYO’s ideal heat d.

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RD2004JN High-Speed Switching Diode
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : ENA1895 RD2004JS-SB SANYO Semiconductors DATA SHEET RD2004JS-SB Features • • • Diffused Junction Silicon Diode Ultrahigh-Speed Switching Diode VF=1.5V max. (IF=20A) VRRM=400V trr=20ns (typ.) Specifications Absolute Maximum Ratings at Ta=25°C Parameter Repetitive Peak Reverse Voltage Non-repeated Peak Reverse Surge Voltage Average Output Current R.M.S Forward Current Surge Forward Current Junction Temperature Storage Temperature Symbol VRRM VRSM DC bias PW≤100μs, duty ≤ 0.1 50Hz resistive load, Sine wave Tc=41°C Tc=25°C (SANYO’s ideal heat dissipation condition) Package limited, DC 50Hz sine wave 1pulse Conditions Ratings 400 430 20 23 180 150 --55 to +150 Unit V V A A A °C °C IO IF(RMS) IFSM Tj Tstg Package Dimensions unit : mm (typ) 7533-001 10.0 3.2 3.5 4.5 2.