RD2004JN - High-Speed Switching Diode

SANYO (now Panasonic)

Key Features

Diffused Junction Silicon Diode Low VF.
High-Speed Switching Diode High breakdown voltage (VRRM=400V). High reliability. Fast forward / reverse recovery time. Low noise at the time of reverse recovery. Attachment workability is good by Mica-less package. Speciﬁcations Absolute Maximum Ratings at Ta=25°C Parameter Repetitive Peak Reverse Voltage Average Output Current Surge Forward Current Junction Temperature Storage Temperature Symb.

RD2004JN high-speed switching diode by SANYO (now Panasonic) - Datasheet Preview

Datasheet Details

Part number	RD2004JN
Manufacturer	SANYO (now Panasonic)
File Size	205.52 KB
Description	High-Speed Switching Diode
Datasheet	RD2004JN Datasheet

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Other Datasheets by SANYO (now Panasonic)

Part Number	Description
RD2004JS-SB	Ultrahigh-Speed Switching Diode
RD2004LN	Ultrahigh-Speed Switching Diode
RD2004LS	Ultrahigh-Speed Switching Diode
RD2004LS-SB5	Ultrahigh-Speed Switching Diode
RD2003JN	High-Speed Switching Diode

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : ENA1486 RD2004JN SANYO Semiconductors DATA SHEET RD2004JN Features • • • • • Diffused Junction Silicon Diode Low VF • High-Speed Switching Diode High breakdown voltage (VRRM=400V). High reliability. Fast forward / reverse recovery time. Low noise at the time of reverse recovery. Attachment workability is good by Mica-less package.