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RD2006LS-SB5 - Ultrahigh-Speed Switching Diode

Key Features

  • Diffused Junction Silicon Diode Ultrahigh-Speed Switching Diode High breakdown voltage (VRRM=600V). High reliability. Easy to be mounted, good heat dissipation. Fast reverse recovery time. Low noise at the time of reverse recovery. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Repetitive Peak Reverse Voltage Average Output Current Surge Forward Current Junction Temperature Storage Temperature Symbol VRRM Conditions Ratings 600 2.

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RD2006LS-SB Ultrahigh-Speed Switching Diode
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : ENA1613 RD2006LS-SB5 SANYO Semiconductors DATA SHEET RD2006LS-SB5 Features • • • • • Diffused Junction Silicon Diode Ultrahigh-Speed Switching Diode High breakdown voltage (VRRM=600V). High reliability. Easy to be mounted, good heat dissipation. Fast reverse recovery time. Low noise at the time of reverse recovery.