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RD2006RH-SB - Ultrahigh-Speed Switching Diode

Key Features

  • Diffused Junction Silicon Diode Ultrahigh-Speed Switching Diode VRRM=600V VF=1.75V max. (IF=20A) trr=21ns (typ. ) Specifications Absolute Maximum Ratings at Ta=25°C Parameter Repetitive Peak Reverse Voltage Average Output Current R. M. S Forward Current Surge Forward Current Junction Temperature Storage Temperature Symbol VRRM DC bias 50Hz resistive load, Sine wave Tc=63°C Tc=25°C (SANYO’s ideal heat dissipation condition).
  • , Package limited, DC 50Hz Sine wave,.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : EN9054 RD2006RH-SB SANYO Semiconductors DATA SHEET RD2006RH-SB Features • • • Diffused Junction Silicon Diode Ultrahigh-Speed Switching Diode VRRM=600V VF=1.75V max. (IF=20A) trr=21ns (typ.) Specifications Absolute Maximum Ratings at Ta=25°C Parameter Repetitive Peak Reverse Voltage Average Output Current R.M.S Forward Current Surge Forward Current Junction Temperature Storage Temperature Symbol VRRM DC bias 50Hz resistive load, Sine wave Tc=63°C Tc=25°C (SANYO’s ideal heat dissipation condition) *, Package limited, DC 50Hz Sine wave, 1 pulse Conditions Ratings 600 20 30 220 150 --55 to +150 Unit V A A A °C °C IO IF(RMS) IFSM Tj Tstg *.