Silicore 14W Hi-Fi AUDIO AMPLIFIER D2030 GENERAL.
YD2030 - 18W Hi-Fi Audio Amplifier
( DataSheet : www.DataSheet4U.com ) YOUDA INTEGRATED CIRCUIT YD2030 18W HI-FI AUDIO AMPLIFIER¡ª DESCRIPTION The YD2030 is a monolithic audio power .D2030 - 14W Hi-Fi Audio Amplifier
Silicore 14W Hi-Fi AUDIO AMPLIFIER D2030 GENERAL DESCRIPTION Outline Drawing The D2030 is a monolithic integrated circuit in Pentawatt package, .YD2030A - 20W Hi-Fi Audio Amplifier
( DataSheet : www.DataSheet4U.com ) YOUDA INTEGRATED CIRCUIT YD2030A 20W HI-FI AUDIO AMPLIFIER¡ª DESCRIPTION The YD2030A is a monolithic audio powe.QSD2030 - PLASTIC SILICON PHOTODIODE
QSD2030 — Plastic Silicon Photodiode November 2018 QSD2030 Plastic Silicon Photodiode Features ■ PIN photodiode ■ Package type: T-1 3/4 (5mm lens di.DRD2030F22 - Rectifier Diode
FEATURES Double Side Cooling High Surge Capability DRD2030F22 Rectifier Diode DS6000-1 March 2011 (LN28186) KEY PARAMETERS VRRM IF(AV) IFSM 22.ASTD2030 - PLANAR TUNNEL (BACK) DIODE
ASTD SERIES PLANAR TUNNEL (BACK) DIODE DESCRIPTION: The ASTD Series of Tunnel Diodes are Optimized for Operation as Back Diode Detectors in Applica.MBRD2030CT - Schottky Barrier Rectifier
Product specification Schottky Barrier Rectifier MBRD2030CT…MBRD20100CT FEATURES High Surge Capacity. For Use In Low Voltage,High Frequency Inv.MBRD2030 - Schottky Barrier Rectifier
Production specification Schottky Barrier Rectifiers MBRD2020---MBRD20100 FEATURES z High surge capacity. z For use in low voltage,high frequency.D2030UK - METAL GATE RF SILICON FET
TetraFET D2030UK METAL GATE RF SILICON FET MECHANICAL DATA Dimensions in mm. 5.50 ± 0.15 1.27 ± 0.05 2 PL. 2 PL. 0.47 1.65 2 PL. 0.3 R. 4 PL. 2.313.2SD2030 - Silicon NPN Transistor
2SD2030, 2SD2031 Silicon NPN Epitaxial Application Low frequency high voltage amplifier Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2S.TD203028 - Phase Control SCR (2800-3600 Amperes Avg 3000-4500 Volts)
.TD203036 - Phase Control SCR (2800-3600 Amperes Avg 3000-4500 Volts)
.STD2030PLS - P-Channel Enhancement Mode Field Effect Transistor
S T U/D2030P LS S amHop Microelectronics C orp. Aug 20 2005 P -C hannel E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y V DS S www.D.D2030 - 2SD2030
To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. Th.2030PLS - STD2030PLS
S T U/D2030P LS S amHop Microelectronics C orp. Aug 20 2005 P -C hannel E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y V DS S -30V .CDBD2030-G - (CDBD2020-G - CDBD20200-G) Chip Schottky Barrier Rectifier
Chip Schottky Barrier Rectifier CDBD2020-G Thru. CDBD20200-G Reverse Voltage: 20 to 200 Volts Forward Current: 20.0 Amp RoHS Device Features -Batch p.CDBD2030-HF - (CDBD2020-HF - CDBD20200-HF) Chip Schottky Barrier Rectifier
Chip Schottky Barrier Rectifier CDBD2020-HF Thru. CDBD20200-HF Reverse Voltage: 20 to 200 Volts Forward Current: 20.0 Amp RoHS Device Halogen Free Fe.SSD2030N - N-Channel MOSFET
SSD2030N N-Channel Enhancement Mode MOSFET Product Summary VDS (V) ID (A) RDS(ON) (mΩ) Max 30 @VGS = 10V 30V 20A 55 @VGS = 4.5V G S D TO-252 D FEAT.