D2389 Datasheet | Specifications & PDF Download

SavantIC Semiconductor Product Specification Silicon NPN Darlington Power Transistors 2SD2389 www.datasheet4u.com DESCRIPTION ·With TO-3PN packag

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Equivalent circuit C Darlington sAbsolute maximum ratings Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SD2389 160 150 5 8 1 80(Tc=25°C) 150 –55 to +150

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Equivalent circuit C Darlington sAbsolute maximum ratings Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SD2389 160 150 5 8 1 80(Tc=25°C) 150 –55 to +150

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isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min) ·High DC Current Gain- : hFE= 500

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