2SD2389 NPN Transistor

INCHANGE

Description

isc Silicon NPN Darlington Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min). High DC Current Gain- : hFE= 5000( Min. Low Collector Sa.

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Datasheet Specifications

Part number: 2SD2389
Manufacturer: INCHANGE
File Size: 202.77 KB
Datasheet: 2SD2389-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for audio, series regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 8 A IB B

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2SD2389 NPN Transistor INCHANGE

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