2SD2389 Datasheet - INCHANGE

Datasheet Details

Part number:

2SD2389

Manufacturer:

INCHANGE

File Size:

202.77 KB

Description:

NPN Transistor

isc Silicon NPN Darlington Power Transistor DESCRIPTION *Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min) *High DC Current Gain- : hFE= 5000( Min.) @(IC= 6A, VCE= 4V) *Low Collector Saturation Voltage- : VCE(sat)= 2.5V(Max)@ (IC= 6A, IB= 6mA) *Complement to Type 2SB1559

2SD2389-INCHANGE.pdf

2SD2389 Datasheet Preview — Preview of 2SD2389 PDF

2SD2389, NPN Transistor

*Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min) *High DC Current Gain- : hFE= 5000( Min.) @(IC= 6A, VCE= 4V) *Low Collector Saturation Voltage- : VCE(sat)= 2.5V(Max)@ (IC= 6A, IB= 6mA) *Complement to Type 2SB1559 *Minimum Lot-to-Lot variations for robust device perfor

2SD2389 Distributor

📁 Related Datasheet

2SD2382 2SD2383 2SD2384 2SD2385 2SD2386 2SD2387

📌 All Tags

2SD2389 NPN Transistor INCHANGE

INCHANGE 2SD2389-like datasheet