2SD2300 Datasheet PDF - Hitachi Semiconductor Silicon NPN Transistor Specs

2SD2300 - Silicon NPN Transistor

Datasheet Summary

Features

High breakdown voltage VCBO = 1500 V.
Built-in damper diode type Outline TO-3PFM 2 1. Base 2. Collector 3. Emitter 1 ID 1 2 3 3 2SD2300 Absolute Maximum Ratings (Ta = 25°C) Item Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector surge current Collector power dissipation Junction temperature Storage temperature C to E diode forward current Note: 1. Value at TC = 25°C. Symbol VCES VEBO IC IC(peak) IC(surge) PC.
Tj.

Datasheet Details

Part number	2SD2300
Manufacturer	Hitachi Semiconductor
File Size	32.07 KB
Description	Silicon NPN Transistor
Datasheet	2SD2300 Datasheet
Additional preview pages of the 2SD2300 datasheet.

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Full PDF Text Transcription

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2SD2300 Silicon NPN Triple Diffused Application CTV horizontal deflection output Features • High breakdown voltage VCBO = 1500 V • Built-in damper diode type Outline TO-3PFM 2 1. Base 2. Collector 3. Emitter 1 ID 1 2 3 3 2SD2300 Absolute Maximum Ratings (Ta = 25°C) Item Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector surge current Collector power dissipation Junction temperature Storage temperature C to E diode forward current Note: 1. Value at TC = 25°C.

Published: Apr 3, 2005 |