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2SD2328 - NPN Transistor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 180V(Min) Low Collector-Emitter Saturation Voltage- : VCE(sat)= 3.0V(Max)@ IC= 10A, IB= 1A High Power Dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD2328 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 180V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= 3.0V(Max)@ IC= 10A, IB= 1A ·High Power Dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 180 V VEBO Emitter-Base voltage 5 V IC Collector Current-Continuous 15 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 1.5 A 150 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website： www.iscsemi.