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2SD2387 Datasheet - Toshiba Semiconductor

2SD2387_ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

2SD2387

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

131.94 KB

Description:

Silicon npn transistor.

2SD2387, Silicon NPN Transistor

2SD2387 TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington power transistor) 2SD2387 Power Amplifier Applications Unit: mm High breakdown voltage: VCEO = 140 V (min) Complementary to 2SB1558 Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating

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