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2SD2387 Silicon NPN Transistor

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Description

2SD2387 TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington power transistor) 2SD2387 Power Amplifier Applications Unit: mm * High .

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Applications

* Unit: mm
* High breakdown voltage: VCEO = 140 V (min)
* Complementary to 2SB1558 Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation (Tc = 25°C) Junction temperature S

2SD2387 Distributors

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Silicon NPN Transistor Toshiba Semiconductor
Toshiba Semiconductor 2SD2387-like datasheet