2SD2387 Silicon NPN Transistor

Toshiba Semiconductor

Description

2SD2387 TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington power transistor) 2SD2387 Power Amplifier Applications Unit: mm * High .

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Datasheet Specifications

Part number: 2SD2387
Manufacturer: Toshiba ↗ Semiconductor
File Size: 131.94 KB
Datasheet: 2SD2387_ToshibaSemiconductor.pdf
Description: Silicon NPN Transistor

Applications

* Unit: mm
* High breakdown voltage: VCEO = 140 V (min)
* Complementary to 2SB1558 Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation (Tc = 25°C) Junction temperature S

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2SD2387 Silicon NPN Transistor Toshiba Semiconductor

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