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2SD2353 Silicon NPN Transistor

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Description

TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2353 Power Amplifier Applications 2SD2353 Unit: mm * High DC current gain: hFE = 800 .

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Applications

* 2SD2353 Unit: mm
* High DC current gain: hFE = 800 to 3200
* Low collector saturation voltage: VCE (sat) = 0.4 V (typ. ) Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 60 V Emitter-bas

2SD2353 Distributors

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