2SD2353 Datasheet - Toshiba Semiconductor

2SD2353, Silicon NPN Transistor

TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2353 Power Amplifier Applications 2SD2353 Unit: mm * High DC current gain: hFE = 800 .

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2SD2353_ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

2SD2353

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

131.62 KB

Description:

Silicon NPN Transistor

Applications

* 2SD2353 Unit: mm
* High DC current gain: hFE = 800 to 3200
* Low collector saturation voltage: VCE (sat) = 0.4 V (typ. ) Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 60 V Emitter-bas

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2SD2353 Silicon NPN Transistor Toshiba Semiconductor

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