2SD2353 Datasheet - Toshiba Semiconductor

2SD2353 Silicon NPN Transistor

TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2353 Power Amplifier Applications 2SD2353 Unit: mm High DC current gain: hFE = 800 to 3200 Low collector saturation voltage: VCE (sat) = 0.4 V (typ.) Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 60 V Emitter-base voltage VEBO 7 V Collector current DC IC 3 A Pulse ICP 6 Base current IB 0.6 A Collector power dissi.

2SD2353_ToshibaSemiconductor.pdf