2SD2352
Toshiba ↗ Semiconductor
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Silicon npn transistor.
TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SD2352
Power Amplifier Applications
2SD2352
Unit: mm
* High DC current gain: hFE = 800 .
📁 Related Datasheet
2SD235 - SILICON POWER TRANSISTOR
(SavantIC)
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD235
..
DESCRIPTION ·With TO-220 package ·Complemen.
2SD235 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 40V(Min) ·Low Collector-Emitter Saturation Voltage-
: .
2SD2351 - General Purpose Transistor
(Rohm)
2SD2351
General Purpose Transistor (50V, 150mA)
Parameter
VCEO IC
Value
50V 150mA
lFeatures 1)High DC current gain.
2)High emitter-base voltage. (V.
2SD2353 - Silicon NPN transistor
(BLUE ROCKET ELECTRONICS)
2SD2353
Rev.F Mar.-2016
DATA SHEET
/ Descriptions TO-220F NPN 。Silicon NPN transistor in a TO-220F Plastic Package.
/ Features
,VCESAT 。 Hig.
2SD2353 - Silicon NPN Transistor
(Toshiba Semiconductor)
TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SD2353
Power Amplifier Applications
2SD2353
Unit: mm
• High DC current gain: hFE = 800 to 3200 .
2SD2357 - Silicon NPN Transistor
(Panasonic Semiconductor)
Transistor
2SD2357
Silicon NPN epitaxial planer type
For low-frequency amplification Complementary to 2SB1537
Unit: mm
s Features
2.6±0.1
4.5±0.1 1.
2SD2358 - Silicon NPN Transistor
(Panasonic Semiconductor)
Transistors
2SD2358
Silicon NPN epitaxial planer type
Unit: mm
For low-frequency output amplification Complementary to 2SB1538 I Features
• Low coll.
2SD2359 - Silicon PNP Transistor
(Panasonic Semiconductor)
Transistor
2SD2359
Silicon NPN epitaxial planer type
For low-frequency amplification
Unit: mm
1.5±0.1 4.5±0.1 1.6±0.2
s Features
2.6±0.1
0.4max.
q.
