2SD2335 Datasheet, Transistor, INCHANGE

PDF File Details

Part number:

2SD2335

Manufacturer:

INCHANGE

File Size:

186.08kb

Download:

📄 Datasheet

Description:

Npn transistor.

2SD2335 Application

• Applications
• Designed for horizontal output applicaitions ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collecto

TAGS

📁 Related Datasheet

2SD2331 - NPN Transistor (INCHANGE)
isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD2331 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·High.

2SD2331 - SILICON POWER TRANSISTOR (SavantIC)
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD2331 .. DESCRIPTION ·With TO-3PFa package ·High vo.

2SD2333 - Silicon NPN Power Transistor (SavantIC)
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD2333 DESCRIPTION ·With TO-3PML package ·High breakdown voltage ·Buil.

2SD2333 - NPN Transistor (INCHANGE)
isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD2333 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·High.

2SD2335 - SILICON POWER TRANSISTOR (SavantIC)
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD2335 .. DESCRIPTION ·With TO-3PFa package ·High vo.

2SD2337 - Silicon NPN Transistor (Hitachi Semiconductor)
2SD2337 Silicon NPN Triple Diffused Application Low frequency high voltage power amplifier TV vertical deflection output plementary pair with 2SB1.

2SD2300 - Silicon NPN Transistor (Hitachi Semiconductor)
2SD2300 Silicon NPN Triple Diffused Application CTV horizontal deflection output Features • High breakdown voltage VCBO = 1500 V • Built-in damper d.

2SD2300 - SILICON POWER TRANSISTOR (SavantIC)
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD2300 .. DESCRIPTION ·With TO-3PFM package ·High br.

2SD2300 - NPN Transistor (INCHANGE)
isc Silicon NPN Power Transistor DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for r.

2SD2318 - High-current gain Power Transistor (Rohm)
High-current gain Power Transistor (60V, 3A) 2SD2318 Features 1) High DC current gain. 2) Low saturation voltage. (Typ. VCE(sat) =0.5V at IC / IB=2A.