2SD2335 NPN Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD2335 .
High Breakdown Voltage- : VCBO= 1500V (Min). High Switching Speed. High Reliability. Built-in Damper Diode. Minimum Lot-to-Lot va.

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Datasheet Specifications

Part number: 2SD2335
Manufacturer: INCHANGE
File Size: 186.08 KB
Datasheet: 2SD2335-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for horizontal output applicaitions ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 600 V VEBO Emitter-Base Voltage 5 V IC Collector Current- Continuous 7 A IB Base Current- Continuous

2SD2335 Distributors

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2SD2335 NPN Transistor INCHANGE

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