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2SD2335 NPN Transistor

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Description

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD2335 .
High Breakdown Voltage- : VCBO= 1500V (Min). High Switching Speed. High Reliability. Built-in Damper Diode. Minimum Lot-to-Lot va.

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Datasheet Specifications

Part number
2SD2335
Manufacturer
INCHANGE
File Size
186.08 KB
Datasheet
2SD2335-INCHANGE.pdf
Description
NPN Transistor

Applications

* Designed for horizontal output applicaitions ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 600 V VEBO Emitter-Base Voltage 5 V IC Collector Current- Continuous 7 A IB Base Current- Continuous

2SD2335 Distributors

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NPN Transistor INCHANGE
INCHANGE 2SD2335-like datasheet