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2SD235 NPN Transistor

2SD235 Description

isc Silicon NPN Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 40V(Min). Low Collector-Emitter Saturation Voltage- : VCE(sat)= 1. Com.

2SD235 Applications

* Designed for audio power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous Collector Power Dissipation @ Ta=2

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Datasheet Details

Part number
2SD235
Manufacturer
INCHANGE
File Size
209.23 KB
Datasheet
2SD235-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE 2SD235-like datasheet