2SD2333 Datasheet, Transistor, INCHANGE

✔ 2SD2333 Application

PDF File Details

Manufacture Logo for INCHANGE
INCHANGE manufacturer logo

Part number:

2SD2333

Manufacturer:

INCHANGE

File Size:

185.79kb

Download:

📄 Datasheet

Description:

Npn transistor. *High Breakdown Voltage- : VCBO= 1500V (Min) *High Switching Speed *High Reliability *Built-in Damper Diode *Minimum Lot-to-Lot varia

Datasheet Preview: 2SD2333 📥 Download PDF (185.79kb)
Page 2 of 2SD2333

TAGS

2SD2333
NPN
Transistor
INCHANGE

📁 Related Datasheet

2SD2331 - NPN Transistor (INCHANGE)
isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD2331 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·High.

2SD2331 - SILICON POWER TRANSISTOR (SavantIC)
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD2331 .. DESCRIPTION ·With TO-3PFa package ·High vo.

2SD2333 - Silicon NPN Power Transistor (SavantIC)
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD2333 DESCRIPTION ·With TO-3PML package ·High breakdown voltage ·Buil.

2SD2335 - SILICON POWER TRANSISTOR (SavantIC)
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD2335 .. DESCRIPTION ·With TO-3PFa package ·High vo.

2SD2335 - NPN Transistor (INCHANGE)
isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD2335 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·High.

2SD2337 - Silicon NPN Transistor (Hitachi Semiconductor)
2SD2337 Silicon NPN Triple Diffused Application Low frequency high voltage power amplifier TV vertical deflection output plementary pair with 2SB1.

2SD2300 - Silicon NPN Transistor (Hitachi Semiconductor)
2SD2300 Silicon NPN Triple Diffused Application CTV horizontal deflection output Features • High breakdown voltage VCBO = 1500 V • Built-in damper d.

2SD2300 - SILICON POWER TRANSISTOR (SavantIC)
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD2300 .. DESCRIPTION ·With TO-3PFM package ·High br.

2SD2300 - NPN Transistor (INCHANGE)
isc Silicon NPN Power Transistor DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for r.

2SD2318 - High-current gain Power Transistor (Rohm)
High-current gain Power Transistor (60V, 3A) 2SD2318 Features 1) High DC current gain. 2) Low saturation voltage. (Typ. VCE(sat) =0.5V at IC / IB=2A.

Stock and price

Motorola Semiconductor Products
POWER BIPOLAR TRANSISTOR, 5A I(C), 1-ELEMENT, NPN, SILICON, PLASTIC/EPOXY, 3 PIN
Quest Components
2SD2333
70 In Stock
Qty : 54 units
Unit Price : $3.25
Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts