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2SD2340 NPN Transistor

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Description

isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor 2SD2340 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 110V(Min). High DC Current Gain : hFE= 5000(Min) @IC= 3A. Low Collector Saturation Voltg.

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Datasheet Specifications

Part number
2SD2340
Manufacturer
INCHANGE
File Size
188.11 KB
Datasheet
2SD2340-INCHANGE.pdf
Description
NPN Transistor

Applications

* Audio，regulator and general purpose. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 130 V VCEO Collector-Emitter Voltage 110 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 6 A ICP Collector Current-Peak Collector

2SD2340 Distributors

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NPN Transistor INCHANGE
INCHANGE 2SD2340-like datasheet