2SD2340 - NPN Transistor
*Collector-Emitter Breakdown Voltage- : V(BR)CEO= 110V(Min) *High DC Current Gain : hFE= 5000(Min) @IC= 3A *Low Collector Saturation Voltgae- : VCE(sat)= 2.5V(Max.)@ IC= 5A *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *Audioļ¼re
