2SD2343
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Power transistor.
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2SD234 - Silicon NPN Power Transistors
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2SD234 - NPN Transistor
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isc Silicon NPN Power Transistor
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DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 50V(Min) ·Low Collector-Emitter Saturation Vol.
2SD2340 - SILICON POWER TRANSISTOR
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..
DESCRIPTION ·With TO-3PN package ·DARLINGT.
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DESCRIPTION ·Collector-Emitter Breakdown Voltage-
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2SD2345 - Silicon NPN Transistor
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Transistor
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Silicon NPN epitaxial planer type
For low-frequency amplification
Unit: mm
1.6±0.15
s Features
q q q q
0.4
0.8±0.1
0.4
High .
2SD2348 - NPN Transistor
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DESCRIPTION ·High Breakdown Voltage-
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2SD2348 - SILICON POWER TRANSISTOR
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2SD2349 - NPN Transistor
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isc Silicon NPN Power Transistor
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: VCBO= 1500V (Min) ·Low Saturation Voltage ·Hi.
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2SD2300 - Silicon NPN Transistor
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Silicon NPN Triple Diffused
Application
CTV horizontal deflection output
Features
• High breakdown voltage VCBO = 1500 V • Built-in damper d.
