2SD2328 - NPN Transistor
*Collector-Emitter Breakdown Voltage- : V(BR)CEO= 180V(Min) *Low Collector-Emitter Saturation Voltage- : VCE(sat)= 3.0V(Max)@ IC= 10A, IB= 1A *High Power Dissipation *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *Power amplifier
