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2SD2328 - NPN Transistor

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Part number 2SD2328
Manufacturer INCHANGE
File Size 197.49 KB
Description NPN Transistor
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Collector-Emitter Breakdown Voltage- : V(BR)CEO= 180V(Min) Low Collector-Emitter Saturation Voltage- : VCE(sat)= 3.0V(Max)@ IC= 10A, IB= 1A High Power Dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 180 V VEBO Emitter-Base voltage 5 V IC Co

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