Datasheet4U Logo Datasheet4U.com

2SD2328 - NPN Transistor

2SD2328 Description

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD2328 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 180V(Min). Low Collector-Emitter Saturation Voltage- : VCE(sat)= 3.

2SD2328 Applications

* Power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 180 V VEBO Emitter-Base voltage 5 V IC Collector Current-Continuous 15 A IB Base Current-Continuous PC Collector Po

📥 Download Datasheet

Preview of 2SD2328 PDF
datasheet Preview Page 2

Datasheet Details

Part number
2SD2328
Manufacturer
INCHANGE
File Size
197.49 KB
Datasheet
2SD2328-INCHANGE.pdf
Description
NPN Transistor

📁 Related Datasheet

  • 2SD2321 - Silicon NPN Transistor (Panasonic Semiconductor)
  • 2SD2324 - NPN Epitaxial Planar Silicon Transistor (Sanyo Semicon Device)
  • 2SD2300 - Silicon NPN Transistor (Hitachi Semiconductor)
  • 2SD2318 - High-current gain Power Transistor (Rohm)
  • 2SD2318F5 - Triple Diffused Planar NPN Silicon Transistor (Rohm)
  • 2SD2333 - Silicon NPN Power Transistor (SavantIC)
  • 2SD2335 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SD2337 - Silicon NPN Transistor (Hitachi Semiconductor)

📌 All Tags

NPN Transistor INCHANGE
INCHANGE 2SD2328-like datasheet