Datasheet4U Logo Datasheet4U.com

2SD234 NPN Transistor

📥 Download Datasheet Datasheet Preview Page 1

Description

isc Silicon NPN Power Transistor 2SD234 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min). Low Collector-Emitter Saturation Voltage- : VCE(sat)= 1. Com.

📥 Download Datasheet

Preview of 2SD234 PDF
datasheet Preview Page 2

Datasheet Specifications

Part number
2SD234
Manufacturer
INCHANGE
File Size
209.47 KB
Datasheet
2SD234-INCHANGE.pdf
Description
NPN Transistor

Applications

* Designed for audio power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous Collector Power Dissipation @ Ta=2

2SD234 Distributors

📁 Related Datasheet

  • 2SD2340 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SD2343 - Power Transistor (Rohm)
  • 2SD2345 - Silicon NPN Transistor (Panasonic Semiconductor)
  • 2SD2300 - Silicon NPN Transistor (Hitachi Semiconductor)
  • 2SD2318 - High-current gain Power Transistor (Rohm)
  • 2SD2318F5 - Triple Diffused Planar NPN Silicon Transistor (Rohm)

📌 All Tags

NPN Transistor INCHANGE
INCHANGE 2SD234-like datasheet