D2557 Datasheet | Specifications & PDF Download

Equivalent circuit C Darlington sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SD2557 200 200 6 5 2 70(Tc=25°C) 150 –55

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isc Silicon NPN Darlington Power Transistor DESCRIPTION ·High DC Current Gain : hFE= 1500(Min.)@ IC= 1A, VCE= 5V ·Collector-Emitter Breakdown Voltage

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2SD2557Darlington Equivalent circuit C B (3.2kΩ)(450Ω) E Silicon NPN Triple Diffused Planar Transistor Application : Series Regulator and General P

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SavantIC Semiconductor Product Specification Silicon NPN Darlington Power Transistors 2SD2557 www.datasheet4u.com DESCRIPTION ·With TO-3PN packag

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PI5PD2556/2557 |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||

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