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2SD2557 - NPN Transistor

2SD2557 Description

isc Silicon NPN Darlington Power Transistor .
High DC Current Gain : hFE= 1500(Min. Collector-Emitter Breakdown Voltage- : V(BR)CEO = 200V(Min). Minimum Lot-to-Lot.

2SD2557 Applications

* Designed for series regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 5 A IB Base Curren

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Datasheet Details

Part number
2SD2557
Manufacturer
INCHANGE
File Size
210.52 KB
Datasheet
2SD2557-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE 2SD2557-like datasheet

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