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2SD2557 Datasheet - INCHANGE

2SD2557 NPN Transistor

*High DC Current Gain : hFE= 1500(Min.)@ IC= 1A, VCE= 5V *Collector-Emitter Breakdown Voltage- : V(BR)CEO = 200V(Min) *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *Designed for series regulator and general purpose applications. AB.

2SD2557-INCHANGE.pdf

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Datasheet Details

Part number:

2SD2557

Manufacturer:

INCHANGE

File Size:

210.52 KB

Description:

Npn transistor.

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