2SD2557 NPN Transistor

INCHANGE

Description

isc Silicon NPN Darlington Power Transistor .
High DC Current Gain : hFE= 1500(Min. Collector-Emitter Breakdown Voltage- : V(BR)CEO = 200V(Min). Minimum Lot-to-Lot.

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Datasheet Specifications

Part number: 2SD2557
Manufacturer: INCHANGE
File Size: 210.52 KB
Datasheet: 2SD2557-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for series regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 5 A IB Base Curren

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2SD2557 NPN Transistor INCHANGE

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