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2SD2558 Datasheet - INCHANGE

2SD2558 NPN Transistor

*Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min) *High DC Current Gain- : hFE= 1500( Min.) @(IC= 1A, VCE= 5V) *Low Collector Saturation Voltage- : VCE(sat)= 1.5V(Max)@ (IC= 1A, IB= 5mA) *Minimum Lot-to-Lot variations for robust device performance and reliable operation AP.

2SD2558-INCHANGE.pdf

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Datasheet Details

Part number:

2SD2558

Manufacturer:

INCHANGE

File Size:

212.59 KB

Description:

Npn transistor.

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