2SD2558 NPN Transistor

INCHANGE

Description

isc Silicon NPN Darlington Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min). High DC Current Gain- : hFE= 1500( Min. Low Collector Sa.

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Datasheet Specifications

Part number: 2SD2558
Manufacturer: INCHANGE
File Size: 212.59 KB
Datasheet: 2SD2558-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for series regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 5 A IB Base Cur

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2SD2558 NPN Transistor INCHANGE

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