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2SD2558

NPN Transistor

2SD2558 General Description


*Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min)
*High DC Current Gain- : hFE= 1500( Min.) @(IC= 1A, VCE= 5V)
*Low Collector Saturation Voltage- : VCE(sat)= 1.5V(Max)@ (IC= 1A, IB= 5mA)
*Minimum Lot-to-Lot variations for robust device performance and reliable operation AP.

2SD2558 Datasheet (212.59 KB)

Preview of 2SD2558 PDF

Datasheet Details

Part number:

2SD2558

Manufacturer:

INCHANGE

File Size:

212.59 KB

Description:

Npn transistor.

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2SD2558 NPN Transistor INCHANGE

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