2SD2526 Datasheet - Toshiba Semiconductor

2SD2526, Silicon NPN Transistor

2SD2526 TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington power transistor) 2SD2526 High Power Switching Applications Hammer Drive, Pul.

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2SD2526_ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

2SD2526

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

144.23 KB

Description:

Silicon NPN Transistor

Applications

* Hammer Drive, Pulse Motor Drive Applications Unit: mm
* High DC current gain: hFE = 2000 (min) (VCE = 3 V, IC = 3 A)
* Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 3 A)
* Complementary to 2SB1641 Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-

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2SD2526 Silicon NPN Transistor Toshiba Semiconductor

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