Datasheet4U Logo Datasheet4U.com

2SD2531 Silicon NPN Power Transistor

2SD2531 Description

isc Silicon NPN Power Transistor .
Low Collector Saturation Voltage- : VCE(sat)= 1. High Power Dissipation- : PC= 25W@ TC= 25℃. Minimum Lot-to-Lot variati.

2SD2531 Applications

* Designed for power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 4 A IB Base Current-Continuous Collec

📥 Download Datasheet

Preview of 2SD2531 PDF
datasheet Preview Page 2

Datasheet Details

Part number
2SD2531
Manufacturer
Inchange Semiconductor
File Size
208.08 KB
Datasheet
2SD2531-InchangeSemiconductor.pdf
Description
Silicon NPN Power Transistor

📁 Related Datasheet

  • 2SD2530 - Silicon NPN triple diffusion planer type Transistor (Panasonic Semiconductor)
  • 2SD2536 - Silicon NPN Transistor (Toshiba Semiconductor)
  • 2SD2537 - Medium Power Transistor (Rohm)
  • 2SD2538 - Silicon NPN Transistor (Panasonic Semiconductor)
  • 2SD2539 - NPN Triple Diffused Planar Silicon Transistor (Toshiba Semiconductor)
  • 2SD2500 - Silicon NPN Transistor (Toshiba Semiconductor)
  • 2SD2504 - Silicon NPN epitaxial planar type Transistor (Panasonic Semiconductor)
  • 2SD2525 - Silicon NPN Triple Diffused Type Transistor (Toshiba)

📌 All Tags

Silicon NPN Power Transistor Inchange Semiconductor
Inchange Semiconductor 2SD2531-like datasheet