Datasheet4U Logo Datasheet4U.com

2SD2562 Datasheet - Inchange Semiconductor

2SD2562 Silicon NPN Darlington Power Transistor

*Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min) *High DC Current Gain- : hFE= 5000( Min.) @(IC= 10A, VCE= 4V) *Low Collector Saturation Voltage- : VCE(sat)= 2.5V(Max)@ (IC= 10A, IB= 10mA) *Complement to Type 2SB1649 *Minimum Lot-to-Lot variations for robust device per.

2SD2562_InchangeSemiconductor.pdf

Preview of 2SD2562 PDF
2SD2562 Datasheet Preview Page 2

Datasheet Details

Part number:

2SD2562

Manufacturer:

Inchange Semiconductor

File Size:

222.92 KB

Description:

Silicon npn darlington power transistor.

📁 Related Datasheet

2SD256 Silicon NPN Power Transistor (INCHANGE)

2SD2560 NPN Transistor (INCHANGE)

2SD2560 Silicon NPN Transistor (Sanken electric)

2SD2560 SILICON POWER TRANSISTOR (SavantIC)

2SD2561 NPN Transistor (INCHANGE)

2SD2561 Silicon NPN Transistor (Sanken electric)

2SD2562 Silicon NPN Transistor (Sanken)

2SD2565 Silicon NPN Transistor (Panasonic Semiconductor)

TAGS

2SD2562 2SD2562 Silicon NPN Darlington Power Transistor Inchange Semiconductor

2SD2562 Distributor