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2SD2562 Datasheet - Inchange Semiconductor

2SD2562 Silicon NPN Darlington Power Transistor

*Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min) *High DC Current Gain- : hFE= 5000( Min.) @(IC= 10A, VCE= 4V) *Low Collector Saturation Voltage- : VCE(sat)= 2.5V(Max)@ (IC= 10A, IB= 10mA) *Complement to Type 2SB1649 *Minimum Lot-to-Lot variations for robust device per.

2SD2562 Datasheet (222.92 KB)

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Datasheet Details

Part number:

2SD2562

Manufacturer:

Inchange Semiconductor

File Size:

222.92 KB

Description:

Silicon npn darlington power transistor.

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2SD2562 Silicon NPN Darlington Power Transistor Inchange Semiconductor

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