2SD2562 Silicon NPN Darlington Power Transistor

Inchange Semiconductor

Description

isc Silicon NPN Darlington Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min). High DC Current Gain- : hFE= 5000( Min. Low Collector S.

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Datasheet Specifications

Part number: 2SD2562
Manufacturer: Inchange Semiconductor
File Size: 222.92 KB
Datasheet: 2SD2562_InchangeSemiconductor.pdf
Description: Silicon NPN Darlington Power Transistor

Applications

* Designed for series regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 15 A IB Base Cu

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2SD2562 Silicon NPN Darlington Power Transistor Inchange Semiconductor

Inchange Semiconductor 2SD2562-like datasheet