2SD2562 - Silicon NPN Darlington Power Transistor
*Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min) *High DC Current Gain- : hFE= 5000( Min.) @(IC= 10A, VCE= 4V) *Low Collector Saturation Voltage- : VCE(sat)= 2.5V(Max)@ (IC= 10A, IB= 10mA) *Complement to Type 2SB1649 *Minimum Lot-to-Lot variations for robust device per
