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2SD2561 NPN Transistor

2SD2561 Description

isc Silicon NPN Darlington Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min). High DC Current Gain- : hFE= 5000( Min. Low Collector S.

2SD2561 Applications

* Designed for audio, series regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 17 A IB

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Datasheet Details

Part number
2SD2561
Manufacturer
INCHANGE
File Size
217.09 KB
Datasheet
2SD2561-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE 2SD2561-like datasheet