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2SD254 NPN Transistor

2SD254 Description

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD254 .
Collector-Emitter Breakdown Voltage- : V(BR) CEO= 70V(Min). Collector Power Dissipation- : PC= 20W @TC= 25℃. Minimum Lot-to-Lot variation.

2SD254 Applications

* Designed for use in general purpose amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 70 V VCEO Collector-Emitter Voltage 70 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 3.0 A I

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Datasheet Details

Part number
2SD254
Manufacturer
INCHANGE
File Size
177.11 KB
Datasheet
2SD254-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE 2SD254-like datasheet