2SD2504 - Silicon NPN epitaxial planar type Transistor
Transistors 2SD2504 Silicon NPN epitaxial planar type For low-frequency power amplification www.DataSheet4U.com Unit: mm 5.0±0.2 4.0±0.2 0.7±0.1 0.7±0.2 12.9±0.5 Low collector-emitter saturation voltage VCE(sat) Large collector current IC Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissip
2SD2504 Features
* 2.3±0.2 1 : Emitter 2 : Collector 3 : Base TO-92-B1 Package
* Electrical Characteristics Ta = 25°C ± 3°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Emitter-base
