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2SD2536 Datasheet - Toshiba Semiconductor

2SD2536 Silicon NPN Transistor

2SD2536 TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington Power Transistor) 2SD2536 Switching Applications Micro Motor Drive, Hammer Drive Applications Unit: mm High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A) Low saturation voltage: VCE (sat) = 1.2 V (max) (IC = 0.7 A, VBH = 4.2 V) Zener diode included between collector and base Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 85 V Co.

2SD2536_ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

2SD2536

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

118.21 KB

Description:

Silicon npn transistor.

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2SD2536 2SD2536 Silicon NPN Transistor Toshiba Semiconductor

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