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2SD2524 Power Transistor

2SD2524 Description

isc Silicon NPN Power Transistor .
High Breakdown Voltage- ：VCBO= 1700V (Min). High Switching Speed. Low Saturation Voltage. Built-in Damper Diode. Minimum Lot-to-L.

2SD2524 Applications

* Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1700 V VCES Collector-Emitter Voltage 1700 V VEBO Emitter-Base Voltage 5 V IC Collector Current- Continuous 8 A ICM Collector C

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Power Transistor Inchange Semiconductor
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