2SD2524 Datasheet - Inchange Semiconductor

2SD2524, Power Transistor

isc Silicon NPN Power Transistor .
High Breakdown Voltage- ：VCBO= 1700V (Min). High Switching Speed. Low Saturation Voltage. Built-in Damper Diode. Minimum Lot-to-L.

datasheet Preview Page 1 from Datasheet4u.com

2SD2524_InchangeSemiconductor.pdf

2SD2524 Datasheet Preview — Preview of 2SD2524 PDF

Datasheet Details

Part number:

2SD2524

Manufacturer:

Inchange Semiconductor

File Size:

214.02 KB

Description:

Power Transistor

Applications

* Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1700 V VCES Collector-Emitter Voltage 1700 V VEBO Emitter-Base Voltage 5 V IC Collector Current- Continuous 8 A ICM Collector C

2SD2524 Distributors

📁 Related Datasheet

2SD2525 2SD2526 2SD2527 2SD2528 2SD2500 2SD2504

📌 All Tags

2SD2524 Power Transistor Inchange Semiconductor

Inchange Semiconductor 2SD2524-like datasheet