Datasheet4U Logo Datasheet4U.com

2SD2560 NPN Transistor

2SD2560 Description

isc Silicon NPN Darlington Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min). High DC Current Gain- : hFE= 5000( Min. Low Collector S.

2SD2560 Applications

* Designed for audio, series regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 15 A IB

📥 Download Datasheet

Preview of 2SD2560 PDF
datasheet Preview Page 2

Datasheet Details

Part number
2SD2560
Manufacturer
INCHANGE
File Size
212.24 KB
Datasheet
2SD2560-INCHANGE.pdf
Description
NPN Transistor

📁 Related Datasheet

  • 2SD2562 - Silicon NPN Darlington Power Transistor (Inchange Semiconductor)
  • 2SD2565 - Silicon NPN Transistor (Panasonic Semiconductor)
  • 2SD2568 - Power Transistor (Rohm)
  • 2SD2500 - Silicon NPN Transistor (Toshiba Semiconductor)
  • 2SD2504 - Silicon NPN epitaxial planar type Transistor (Panasonic Semiconductor)
  • 2SD250A - Silicon NPN Power Transistors (Inchange Semiconductor)
  • 2SD2524 - Power Transistor (Inchange Semiconductor)
  • 2SD2525 - Silicon NPN Triple Diffused Type Transistor (Toshiba)

📌 All Tags

NPN Transistor INCHANGE
INCHANGE 2SD2560-like datasheet