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2SD256 Datasheet - INCHANGE

2SD256 - Silicon NPN Power Transistor

*Collector-Emitter Breakdown Voltage- : V(BR) CEO= 40V(Min) *Collector Power Dissipation- : PC= 25W @TC= 25℃ *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *Designed for use in general purpose amplifier and switching applications.

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2SD256-INCHANGE.pdf

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Datasheet Details

Part number:

2SD256

Manufacturer:

INCHANGE

File Size:

180.74 KB

Description:

Silicon npn power transistor.

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