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2SD256 Silicon NPN Power Transistor

2SD256 Description

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD256 .
Collector-Emitter Breakdown Voltage- : V(BR) CEO= 40V(Min). Collector Power Dissipation- : PC= 25W @TC= 25℃. Minimum Lot-to-Lot variation.

2SD256 Applications

* Designed for use in general purpose amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 4.0 A I

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Datasheet Details

Part number
2SD256
Manufacturer
INCHANGE
File Size
180.74 KB
Datasheet
2SD256-INCHANGE.pdf
Description
Silicon NPN Power Transistor

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Silicon NPN Power Transistor INCHANGE
INCHANGE 2SD256-like datasheet