Datasheet4U Logo Datasheet4U.com

2SD256 Silicon NPN Power Transistor

📥 Download Datasheet  Datasheet Preview Page 1

Description

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD256 .
Collector-Emitter Breakdown Voltage- : V(BR) CEO= 40V(Min). Collector Power Dissipation- : PC= 25W @TC= 25℃. Minimum Lot-to-Lot variation.

📥 Download Datasheet

Preview of 2SD256 PDF
datasheet Preview Page 2

Datasheet Specifications

Part number
2SD256
Manufacturer
INCHANGE
File Size
180.74 KB
Datasheet
2SD256-INCHANGE.pdf
Description
Silicon NPN Power Transistor

Applications

* Designed for use in general purpose amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 4.0 A I

2SD256 Distributors

📁 Related Datasheet

📌 All Tags

INCHANGE 2SD256-like datasheet