D2560 Datasheet | Specifications & PDF Download

Equivalent circuit C Darlington 2SD2560 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=150V VEB=

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ISD2560/75/90/120 SINGLE-CHIP, MULTIPLE-MESSAGES, VOICE RECORD/PLAYBACK DEVICE 60-, 75-, 90-, AND 120-SECOND DURATION Publication Release Date: May 2

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www.DataSheet4U.com ® ISD2500 Series Single-Chip Voice Record/Playback Devices 32-*, 40-*, 48-*, 64-*, 60-, 75-, 90-, and 120-Second Durations FEATU

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www.DataSheet4U.com ,6'     3URGXFWV Single-Chip Voice Record/Playback Devices 60-, 75-, 90-, and 120-Second Durations *(1(5$/'(6&5,37,21

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www.DataSheet4U.com ,6'     3URGXFWV Single-Chip Voice Record/Playback Devices 60-, 75-, 90-, and 120-Second Durations *(1(5$/'(6&5,37,21

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2SD2560 Darlington Equivalent circuit C B (70Ω) E Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1647) Application : Audio, S

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PI5PD2560/2561 |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||

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www.DataSheet4U.com ,6'     3URGXFWV Single-Chip Voice Record/Playback Devices 60-, 75-, 90-, and 120-Second Durations *(1(5$/'(6&5,37,21

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www.DataSheet4U.com ,6'     3URGXFWV Single-Chip Voice Record/Playback Devices 60-, 75-, 90-, and 120-Second Durations *(1(5$/'(6&5,37,21

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isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min) ·High DC Current Gain- : hFE= 5000

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SavantIC Semiconductor Product Specification Silicon NPN Darlington Power Transistors 2SD2560 www.datasheet4u.com DESCRIPTION ·With TO-3PN packag

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www.DataSheet4U.com ,6'     3URGXFWV Single-Chip Voice Record/Playback Devices 60-, 75-, 90-, and 120-Second Durations *(1(5$/'(6&5,37,21

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www.DataSheet.co.kr TCD2560D TOSHIBA CCD Image Sensor CCD (charge coupled device) TCD2560D The TCD2560D is a high sensitive and low dark current 540

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