AOD3N40 400V,2.6A N-Channel MOSFET General Descri.
TGD30N40P - IGBT
TGD30N40P Features: • 400V Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy parallel Operatio.TGD30N40P - Field Stop Trench IGBT
TGD30N40P Features: • 400V Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy parallel Operatio.D30N40 - AOD30N40
AOD3N40 400V,2.6A N-Channel MOSFET General Description Product Summary The AOD3N40 has been fabricated using an advanced high voltage MOSFET proces.