2SD389 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQ.
HD38991 - Digital Clock
www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com .RFPD3890 - Hybrid Power Doubler amplifier module
RFPD3890 27dB Power Doubler Hybrid 40MHz to 1003MHz The RFPD3890 is a hybrid power doubler amplifier module. The part employs GaAs MESFET, GaAs pHEMT .SPD3899 - (SPD3899 - SPD3903) FAST RECOVERY RECTIFIER
SPD3899 Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssd.BD3893FV - Shock Sensor Signal Processer
Shock Sensor Signal Processing IC BD3893FV Description The BD3893FV is a shock sensor signal processing IC for HDD, CD/DVD drive that detects a shock.IRD3899 - 20 AND 30 AMP FAST RECOVERY RECTIFIER DIODES
.2SD389A - Si NPN Transistor
www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com .D389 - NPN EPITAXIAL SILICON TRANSISTOR
2SD389 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER Complement to 2SB507 ABSOLUTE MAXIMUM RATINGS (TA=25℃) Characteristic Coll.SPD3900 - (SPD3899 - SPD3903) FAST RECOVERY RECTIFIER
SPD3899 Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssd.SPD3901 - (SPD3899 - SPD3903) FAST RECOVERY RECTIFIER
SPD3899 Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssd.SPD3902 - (SPD3899 - SPD3903) FAST RECOVERY RECTIFIER
SPD3899 Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssd.SPD3903 - (SPD3899 - SPD3903) FAST RECOVERY RECTIFIER
SPD3899 Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssd.2SD389 - NPN Transistor
isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·Wide Area of Safe Operation ·High Power Diss.1ED3890MU12M - isolated gate driver
1ED38x0Mc12M (1ED-X3 Digital) EiceDRIVER™ 1ED38x0Mc12M Enhanced Datasheet Single-channel 5.7 kV (rms) isolated gate driver IC with I2C configurabili.1ED3890MC12M - isolated gate driver
1ED38x0Mc12M (1ED-X3 Digital) EiceDRIVER™ 1ED38x0Mc12M Enhanced Datasheet Single-channel 5.7 kV (rms) isolated gate driver IC with I2C configurabili.