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2SD389 NPN Transistor

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Description

isc Silicon NPN Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min). Wide Area of Safe Operation. High Power Dissipation. Minimum Lot-to-Lot va.

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Datasheet Specifications

Part number
2SD389
Manufacturer
INCHANGE
File Size
207.90 KB
Datasheet
2SD389-INCHANGE.pdf
Description
NPN Transistor

Applications

* Designed for medium power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous PC Collector Power Dissipation @

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NPN Transistor INCHANGE
INCHANGE 2SD389-like datasheet