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2SD389

NPN Transistor

2SD389 General Description


*Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min)
*Wide Area of Safe Operation
*High Power Dissipation
*Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS
*Designed for medium power amplifier applications. ABSOLUTE MAXIMUM RA.

2SD389 Datasheet (207.90 KB)

Preview of 2SD389 PDF

Datasheet Details

Part number:

2SD389

Manufacturer:

INCHANGE

File Size:

207.90 KB

Description:

Npn transistor.

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2SD389 NPN Transistor INCHANGE

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