2SD312 NPN Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD312 .
High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 600V(Min). Fast Switching Speed. Wide Area of Safe Operation. Minimum Lot-to-Lo.

📥 Download Datasheet

2SD312 Datasheet Preview — Preview of 2SD312 PDF

Datasheet Specifications

Part number: 2SD312
Manufacturer: INCHANGE
File Size: 189.11 KB
Datasheet: 2SD312-INCHANGE.pdf
Description: NPN Transistor

Applications

* Switching regulator and high voltage switching applications
* High speed DC-DC converter applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 800 V VCEO Collector-Emitter Voltage 600 V VEBO Emitter-Base Voltage 7 V IC Collect

2SD312 Distributors

📁 Related Datasheet

2SD311 2SD313 2SD315 2SD317A 2SD318A 2SD30

📌 All Tags

2SD312 NPN Transistor INCHANGE

INCHANGE 2SD312-like datasheet