2SD312 Datasheet - INCHANGE

2SD312, NPN Transistor

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD312 .
High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 600V(Min). Fast Switching Speed. Wide Area of Safe Operation. Minimum Lot-to-Lo.

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2SD312-INCHANGE.pdf

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Datasheet Details

Part number:

2SD312

Manufacturer:

INCHANGE

File Size:

189.11 KB

Description:

NPN Transistor

Applications

* Switching regulator and high voltage switching applications
* High speed DC-DC converter applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 800 V VCEO Collector-Emitter Voltage 600 V VEBO Emitter-Base Voltage 7 V IC Collect

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2SD312 NPN Transistor INCHANGE

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