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2SD312 - NPN Transistor

2SD312 Description

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD312 .
High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 600V(Min). Fast Switching Speed. Wide Area of Safe Operation. Minimum Lot-to-Lo.

2SD312 Applications

* Switching regulator and high voltage switching applications
* High speed DC-DC converter applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 800 V VCEO Collector-Emitter Voltage 600 V VEBO Emitter-Base Voltage 7 V IC Collect

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Datasheet Details

Part number
2SD312
Manufacturer
INCHANGE
File Size
189.11 KB
Datasheet
2SD312-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE 2SD312-like datasheet