2SD311 Silicon NPN Power Transistor

Inchange Semiconductor

Description

isc Silicon NPN Power Transistor 2SD311 .
High Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V (Min). High Switching Speed. Minimum Lot-to-Lot variations for robust device.

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Datasheet Specifications

Part number: 2SD311
Manufacturer: Inchange Semiconductor
File Size: 203.71 KB
Datasheet: 2SD311-InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistor

Applications

* Power switching
* Power amplification
* Power driver ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 800 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 15 A IB Base Current-

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2SD311 Silicon NPN Power Transistor Inchange Semiconductor

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