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2SD363 - Silicon NPN Power Transistor

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Part number 2SD363
Manufacturer Inchange Semiconductor
File Size 212.62 KB
Description Silicon NPN Power Transistor
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Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) Collector Power Dissipation- : PC= 40W(Max)@ TC= 25℃ Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for B/W TV horizontal deflection output applications.

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