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2SD363 Datasheet - Inchange Semiconductor

Silicon NPN Power Transistor

2SD363 General Description

*Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) *Collector Power Dissipation- : PC= 40W(Max)@ TC= 25℃ *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *Designed for B/W TV horizontal deflection output applications. ABSOLUTE.

2SD363 Datasheet (212.62 KB)

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Datasheet Details

Part number:

2SD363

Manufacturer:

Inchange Semiconductor

File Size:

212.62 KB

Description:

Silicon npn power transistor.

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2SD363 Silicon NPN Power Transistor Inchange Semiconductor

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