2SD363 - Silicon NPN Power Transistor
*Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) *Collector Power Dissipation- : PC= 40W(Max)@ TC= 25℃ *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *Designed for B/W TV horizontal deflection output applications.
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