2SD363 Silicon NPN Power Transistor

Inchange Semiconductor

Description

isc Silicon NPN Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min). Collector Power Dissipation- : PC= 40W(Max)@ TC= 25℃. Minimum Lot-to-Lot vari.

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Datasheet Specifications

Part number: 2SD363
Manufacturer: Inchange Semiconductor
File Size: 212.62 KB
Datasheet: 2SD363_InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistor

Applications

* Designed for B/W TV horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous PC Collector Powe

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2SD363 Silicon NPN Power Transistor Inchange Semiconductor

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