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2SD380 Silicon NPN Power Transistor

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Description

isc Silicon NPN Power Transistor .
High Breakdown Voltage- : VCBO= 1500V (Min). High Switching Speed. Minimum Lot-to-Lot variations for robust device performance and reliab.

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Datasheet Specifications

Part number
2SD380
Manufacturer
Inchange Semiconductor
File Size
202.30 KB
Datasheet
2SD380_InchangeSemiconductor.pdf
Description
Silicon NPN Power Transistor

Applications

* Designed for line-operated horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCES Collector-Emitter Voltage 1500 V VCEO Collector-Emitter Voltage 700 V VEBO Emitter-Base Voltage 5 V IC

2SD380 Distributors

📁 Related Datasheet

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  • 2SD389 - NPN Transistor (INCHANGE)

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Silicon NPN Power Transistor Inchange Semiconductor
Inchange Semiconductor 2SD380-like datasheet